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| Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.50.1 0.50.1 (1.5) 2.54 1.7 For optical control systems Features Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : = 22 deg. (typ.) Transparent epoxy resin package o3.80.2 o3.00.2 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 -25 to +85 -30 to +100 Unit mW mA A V C C 1.0 15.01.0 4.50.3 5.00.2 0.6 1 2 1: Anode 2: Cathode f = 100Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Cutoff frequency * Symbol Ie P VF IR fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V The angle in which radiant intencity is 50% min 12 typ 860 40 1.6 22 20 max Unit mW/sr nm nm 1.9 10 V A deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz ( PO(fCMHz) 10 log =-3 P O (1MHz) ) 1 LNA4801L Infrared Light Emitting Diodes IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 4 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 -1 20 1 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -1 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) Ie -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 2.2 VF -- Ta 10 Ie -- Ta IF = 50mA Ie Relative radiant intensity VF (V) 10 (1) 1.8 IF = 100mA 50mA Forward voltage (2) 1 1.4 Relative radiant intensity Ie 120 1 10 -1 1.0 10 -2 1 10 10 2 10 3 0.6 - 40 0 40 80 10 -1 - 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 900 80 80 70 Relative radiant intensity (%) 90 30 880 60 60 50 40 40 50 60 70 80 90 860 40 30 20 840 20 820 - 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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